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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
(a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
(d)
FEATURES
*High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
(4.5)
0.95+/-0.2
2.6+/-0.2
*High Efficiency: 50%min. (520MHz) *Integrated gate protection diode
INDEX MARK [Gate]
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
APPLICATION
SIDE VIEW
Standoff = max 0.05
For output stage of high power amplifiers in UHF band mobile radio sets.
0.7+/-0.1
UNIT:mm DETAIL A NOTES: 1. ( ) Typical value
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter "G" after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Drain Current Input Power Channel dissipation Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Zg=Zl=50 Tc=25C Junction to case RATINGS 40 -5 to +10 4.0 1.6 83 150 -40 to +125 1.5 UNIT V V A W W
C C C/W
D
G
S SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency
(Tc=25C, UNLESS OTHERWISE NOTED)
CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz , VDD=7.2V Pin=0.8W,Idq=1.0A VDD=9.5V,Po=8W(Pin Control) f=520MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 0.5 8 50 LIMITS TYP MAX. 10 1 2.5 9 No destroy UNIT uA uA V W % -
VSWRT Load VSWR tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
RD09MUP2
MITSUBISHI ELECTRIC 1/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
Vgs-Ids CHARACTERISTICS 8
Ta=+25C Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W TYPICAL CHARACTERISTICS
60 CHANNEL DISSIPATION Pch(W 50 40 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200 0 0 1 2 Vgs(V) 3 4
On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm)
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm)
6 Ids(A),GM(S)
Ids
4
GM
2
Vds-Ids CHARACTERISTICS 9
Ta=+25C
Vds VS. Ciss CHARACTERISTICS
Vgs=4.5V
160 140
Ta=+25C f=1MHz
8 7 6 Ids(A) 5 4 3 2 1 0 0 1 2 3 4 5 Vds(V) 6 7 8 9
Vgs=4.0V
120 Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Vgs=3.5V
Vgs=3.0V
Vds VS. Coss CHARACTERISTICS 160 140 120 Coss(pF) Crss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
RD09MUP2
MITSUBISHI ELECTRIC 2/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
Pin-Po CHARACTERISTICS @f=520MHz 20 80
Ta=25C f=520MHz Vdd=7.2V Idq=1.0A
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=520MHz
40 Po(dBm) , Gp(dB) , Idd(A)
Ta=+25C f=520MHz Vdd=7.2V Idq=1.0A
Po
80 15 Pout(W) , Idd(A) 60 d(%)
70
d
60
Po
30
50 40 30 d(%)
20
Gp
40
10
10
20
5
Idd
20 10
0 0 5 10 15 20 Pin(dBm) 25 30 35
0
0 0.0 0.5 1.0 Pin(W) 1.5
0 2.0
Vdd-Po CHARACTERISTICS @f=520MHz 20
Ta=25C f=520MHz Pin=1.0W Idq=1.0A Zg=ZI=50 ohm
10
15
Po
8
Po(W)
10
5
5
Idd
3
0 4 6 8 Vdd(V) 10 12
0
RD09MUP2
Idd(A)
MITSUBISHI ELECTRIC 3/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
Vdd
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W TEST CIRCUIT (f=520MHz)
Vgg
C1 W 19mm RD09MUP2 520MHz 4.7K Ohm RF-in 330pF 5pF 33pF 13mm 14.5mm 3.5mm 6mm 3mm 47pF 5mm 19mm W
C2
22uF,50V
L 5pF 21mm 5pF
RF-out 7mm 330pF
Note:Board material= glass-Epoxy Substrate L:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm C1,C2:2200pF W:Line width=1.0mm
RD09MUP2
MITSUBISHI ELECTRIC 4/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
S12 S22 (ang) -7.1 -8.2 -10.4 -10.9 -10.0 -8.4 -6.0 -4.1 -5.6 0.6 2.6 8.2 15.1 25.3 27.2 35.5 40.1 45.0 51.3 56.2 56.9 59.9 64.2 67.0 66.6 68.9 70.7 70.9 72.1 72.0 74.3 74.2 74.5 74.9 74.1 72.8 75.4 75.1 76.0 75.8 75.0 75.8 75.8 75.6 76.0 76.5 (mag) 0.798 0.804 0.808 0.812 0.819 0.830 0.842 0.851 0.857 0.859 0.863 0.866 0.878 0.889 0.895 0.897 0.899 0.900 0.906 0.913 0.919 0.921 0.924 0.925 0.924 0.928 0.933 0.937 0.939 0.936 0.937 0.937 0.938 0.943 0.944 0.949 0.946 0.946 0.944 0.948 0.949 0.952 0.952 0.949 0.951 0.952 (ang) -173.9 -174.4 -174.9 -175.1 -175.2 -175.1 -175.3 -175.3 -175.8 -176.1 -176.3 -176.8 -177.1 -177.4 -177.8 -178.1 -178.6 -178.8 -179.3 -179.5 179.8 179.6 179.0 178.8 178.6 178.2 177.7 177.3 177.0 176.7 176.4 176.1 175.8 175.5 175.0 174.7 174.7 174.5 174.1 173.8 173.4 172.8 172.7 172.7 172.6 172.2 (mag) 0.016 0.014 0.014 0.013 0.013 0.011 0.011 0.010 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.008 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.014 0.014 0.015 0.015 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.022 0.022 0.023 0.024 0.025 0.026 0.026 0.027 0.028 0.029
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq. [MHz] 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000 S11 (mag) 0.900 0.901 0.905 0.908 0.909 0.912 0.916 0.918 0.922 0.923 0.928 0.930 0.933 0.936 0.937 0.939 0.939 0.945 0.947 0.950 0.952 0.950 0.952 0.953 0.953 0.956 0.957 0.961 0.957 0.961 0.962 0.960 0.962 0.963 0.963 0.964 0.962 0.964 0.965 0.965 0.962 0.967 0.963 0.964 0.966 0.964 (ang) -175.7 -176.4 -176.7 -177.2 -177.5 -177.6 -178.0 -178.5 -178.7 -178.9 -179.0 -179.1 -179.3 -179.6 179.9 179.7 179.3 179.1 178.9 178.8 178.7 178.3 178.1 177.6 177.2 177.0 177.0 176.9 176.8 176.5 176.2 176.0 175.5 175.3 175.2 175.0 175.0 174.7 174.5 174.1 173.8 173.5 173.5 173.2 173.1 173.0 (mag) 4.425 3.651 3.056 2.614 2.273 2.003 1.787 1.602 1.442 1.297 1.176 1.075 0.989 0.910 0.841 0.775 0.718 0.667 0.622 0.582 0.548 0.513 0.480 0.455 0.427 0.402 0.383 0.362 0.344 0.326 0.311 0.298 0.283 0.269 0.259 0.247 0.237 0.230 0.220 0.211 0.202 0.193 0.189 0.180 0.176 0.170 S21 (ang) 75.0 71.1 67.4 64.2 61.4 58.7 55.9 53.3 50.6 48.0 45.8 44.1 42.3 40.0 37.9 36.3 34.7 33.4 32.1 30.7 29.2 28.0 26.8 25.7 24.4 23.7 23.2 22.1 21.3 20.4 19.5 19.0 18.6 17.5 17.2 16.9 16.5 15.8 16.2 15.4 15.1 15.0 14.4 13.8 14.6 14.0
RD09MUP2
MITSUBISHI ELECTRIC 5/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
S12 S22 (ang) 0.2 -0.6 0.3 1.6 4.4 6.5 8.5 8.0 10.9 13.1 18.6 26.6 27.8 32.4 34.4 40.1 47.0 52.8 50.3 56.9 59.5 62.7 63.1 63.6 65.6 66.3 67.6 69.8 69.8 70.8 71.9 72.4 72.5 73.0 72.7 74.0 73.9 74.2 74.1 73.9 74.6 74.4 74.7 74.7 74.3 74.4 (mag) 0.825 0.833 0.832 0.829 0.833 0.846 0.863 0.870 0.868 0.864 0.860 0.866 0.879 0.891 0.896 0.896 0.895 0.892 0.898 0.908 0.912 0.914 0.915 0.916 0.918 0.919 0.924 0.930 0.932 0.929 0.929 0.931 0.930 0.934 0.939 0.944 0.939 0.938 0.939 0.940 0.942 0.944 0.945 0.945 0.948 0.948 (ang) -175.5 -176.2 -177.1 -177.3 -177.4 -177.2 -177.4 -177.5 -177.9 -178.2 -178.1 -178.4 -178.8 -179.0 -179.4 -179.7 -179.8 -180.0 179.6 179.3 178.8 178.4 178.1 178.0 177.8 177.6 177.0 176.4 176.3 176.0 175.9 175.8 175.3 174.8 174.5 174.3 174.1 174.0 173.9 173.4 173.0 172.5 172.3 172.3 172.4 172.0 (mag) 0.012 0.012 0.011 0.011 0.011 0.010 0.010 0.010 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.009 0.010 0.011 0.011 0.012 0.012 0.014 0.014 0.014 0.015 0.016 0.017 0.017 0.018 0.019 0.019 0.020 0.021 0.021 0.022 0.023 0.023 0.025 0.025 0.026 0.027 0.027 0.029 0.029
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq. [MHz] 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000 S11 (mag) 0.914 0.918 0.920 0.922 0.921 0.921 0.922 0.925 0.924 0.928 0.929 0.936 0.935 0.936 0.937 0.937 0.939 0.941 0.944 0.946 0.948 0.950 0.949 0.948 0.950 0.952 0.954 0.958 0.954 0.957 0.956 0.955 0.956 0.959 0.958 0.959 0.962 0.962 0.961 0.960 0.961 0.961 0.960 0.962 0.962 0.960 (ang) -176.9 -177.4 -178.0 -178.3 -178.6 -178.8 -179.3 -179.4 -179.8 180.0 -180.0 180.0 179.8 179.4 179.0 178.9 178.5 178.5 178.3 178.1 178.0 177.9 177.5 177.1 177.0 176.6 176.5 176.5 176.4 176.3 176.0 175.5 175.2 174.9 175.0 174.8 174.8 174.5 174.3 174.0 173.6 173.3 173.3 173.1 172.9 172.8 (mag) 4.363 3.638 3.060 2.614 2.287 2.039 1.840 1.665 1.503 1.364 1.240 1.144 1.064 0.993 0.923 0.851 0.795 0.738 0.696 0.654 0.619 0.585 0.549 0.518 0.491 0.467 0.444 0.426 0.400 0.382 0.367 0.350 0.334 0.319 0.308 0.293 0.281 0.271 0.261 0.252 0.244 0.233 0.225 0.219 0.211 0.206 S21 (ang) 78.5 74.9 71.4 68.8 66.7 64.6 62.1 59.6 56.8 54.7 52.9 51.1 49.4 47.2 45.2 43.5 41.7 40.4 39.3 38.0 36.5 34.8 33.5 32.2 31.1 30.3 29.5 28.5 27.2 26.3 25.6 24.9 23.9 23.4 22.3 22.0 21.5 21.0 20.4 20.0 19.5 18.9 18.5 18.2 17.5 18.0
RD09MUP2
MITSUBISHI ELECTRIC 6/7
1st Jun. 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD09MUP2
MITSUBISHI ELECTRIC 7/7
1st Jun. 2006

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